Radiation damage and amorphization of silicon by 2 MeV nitrogen ion implantation

✍ Scribed by J.K.N. Lindner; R. Zuschlag; E.H. te Kaat

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 359 KB
• Volume: 12
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(92)90250-d

✦ Synopsis

Radiation damage and amorphization of (111) silicon after 2 MeV 14N ion implantation at temperatures from 125 to 450 K is studied in a dose range of 2 x 10 ~3 to 5 x 10 ~7 N cm -2 mainly by optical reflectivity depth profiling. Over a wide range of doses and temperatures, damage can be described by a model (N. Hecking et al., Nucl. Instr. and Meth., B15 (1986) 760). A comparison of model parameters for nitrogen and heavier ions yields insight in the different weights of defect production and interaction processes involved. A favoring influence of nitrogen on the defect stabilization and the amorphization is discussed.