Ion-implantation-caused special damage profiles determined by spectroscopic ellipsometry in crystalline and in relaxed (annealed) amorphous silicon

✍ Scribed by T. Lohner; M. Fried; J. Gyulai; K. Vedam; N.V. Nguyen; L.J. Hanekamp; A. van Silfhout

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 355 KB
• Volume: 233
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/0040-6090(93)90071-v