𝔖 Bobbio Scriptorium

✦ LIBER ✦

398. Radiation damage in silicon caused by ion implantation and its annealing: M Schenk, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 33–44.

Publisher: Elsevier Science
Year: 1974
Tongue: English
Weight: 155 KB
Volume: 24
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(74)91912-5

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508. Investigation of radiation defects

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370. Investigation of distribution of co

370. Investigation of distribution of concentrations of phosphorus and boron implanted in silicon: Ya Krylov et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 157–163 (in Russian).

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402. Investigation of results of implant

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369. Investigation of distribution of co

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