𝔖 Bobbio Scriptorium

✦ LIBER ✦

369. Investigation of distribution of concentration and evaluation of uniformity of surface distribution of phosphorus implanted in silicon: A Golanski et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 165–172 (in Russian).

Publisher: Elsevier Science
Year: 1974
Tongue: English
Weight: 158 KB
Volume: 24
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(74)91883-1

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📜 SIMILAR VOLUMES

370. Investigation of distribution of co

370. Investigation of distribution of concentrations of phosphorus and boron implanted in silicon: Ya Krylov et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 157–163 (in Russian).

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508. Investigation of radiation defects

508. Investigation of radiation defects in implanted silicon films: G Goetz et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 95–100 (in Russian).

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372. Determination of implantation profi

372. Determination of implantation profiles in silicon: R Ross et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 151–156 (in German).

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401. Influence of preliminary bombardmen

401. Influence of preliminary bombardment on properties of silicon at ion implantation: I Gulai et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 191–196 (in Russian).

📂 Article 📅 1974 🏛 Elsevier Science 🌐 English ⚖ 155 KB

375. X-ray investigation of structure of

375. X-ray investigation of structure of ion-doped silicon crystals: Yu Auleitner et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 65–77 (in Russian).

📂 Article 📅 1974 🏛 Elsevier Science 🌐 English ⚖ 158 KB

368. Investigation of the process of gen

368. Investigation of the process of generation of defects at ion implantation: N N Gerasimenko et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 45–52 (in Russian).

📂 Article 📅 1974 🏛 Elsevier Science 🌐 English ⚖ 158 KB