𝔖 Bobbio Scriptorium

✦ LIBER ✦

508. Investigation of radiation defects in implanted silicon films: G Goetz et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 95–100 (in Russian).

Publisher: Elsevier Science
Year: 1974
Tongue: English
Weight: 182 KB
Volume: 24
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(74)92022-3

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372. Determination of implantation profi

372. Determination of implantation profiles in silicon: R Ross et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 151–156 (in German).

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370. Investigation of distribution of concentrations of phosphorus and boron implanted in silicon: Ya Krylov et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 157–163 (in Russian).

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