𝔖 Bobbio Scriptorium

✦ LIBER ✦

401. Influence of preliminary bombardment on properties of silicon at ion implantation: I Gulai et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 191–196 (in Russian).

Publisher: Elsevier Science
Year: 1974
Tongue: English
Weight: 155 KB
Volume: 24
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(74)91915-0

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📜 SIMILAR VOLUMES

399. Backscattering investigations on si

399. Backscattering investigations on silicon: L Keszthelyi et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 111–112.

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508. Investigation of radiation defects

508. Investigation of radiation defects in implanted silicon films: G Goetz et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 95–100 (in Russian).

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372. Determination of implantation profi

372. Determination of implantation profiles in silicon: R Ross et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 151–156 (in German).

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374. The influence of ion bombardment on

374. The influence of ion bombardment on the optical properties of alkali halide crystals: H Karge et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 215–218.

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368. Investigation of the process of gen

368. Investigation of the process of generation of defects at ion implantation: N N Gerasimenko et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 45–52 (in Russian).

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548. 150 kV equipment for ion implantati

548. 150 kV equipment for ion implantation: M Setvak et al, Proc Int Work Conf of Ion Implant in Semicon in Rossendorf, Berlin 1972, 13–21 (in Russian).

📂 Article 📅 1974 🏛 Elsevier Science 🌐 English ⚖ 161 KB