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402. Investigation of results of implantation of p-type single silicon crystals by phosphorus ions with energy up to 50 keV: V Zhuk et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 197–200 (in Russian).


Publisher
Elsevier Science
Year
1974
Tongue
English
Weight
155 KB
Volume
24
Category
Article
ISSN
0042-207X

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