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Redistribution and electrical activation of implanted arsenic in silicon on insulator substrates formed by oxygen ion implantation

✍ Scribed by Robinson, A. K.; Reeson, K. J.; Hemment, P. L. F.

Book ID: 120618140
Publisher: American Institute of Physics
Year: 1990
Tongue: English
Weight: 553 KB
Volume: 68
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.347163

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