Ellipsometric and ion backscattering measurements of the properties of silicon-on-insulator structure formed by thermally activated redistribution of high-dose ion implanted nitrogen

✍ Scribed by Khanh, N. Q. ;Fried, M. ;Battistig, G. ;Laczik, Z. ;Lohner, T. ;Jaroli, E. ;Schiller, V. ;Guylai, J.

• Publisher: John Wiley and Sons
• Year: 1988
• Tongue: English
• Weight: 294 KB
• Volume: 108
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.2211080159