Electrical activation of B and As implants in Silicon On Insulator (SOI) wafers
โ Scribed by L. Ottaviano; M. Italia; G. Mannino; V. Privitera; M. Herden; T. Feudel
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 90 KB
- Volume
- 114-115
- Category
- Article
- ISSN
- 0921-5107
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๐ SIMILAR VOLUMES
bandwidth of 29% is attained for the double-folded slot antenna fed by a short-circuited microstrip line. The radiation patterns are similar to the single-dipole slot antenna as long as the narrow slot structure is maintained. The measured far-field patterns are stable across the passband, which mak
Silicon oxynitride (Si x O y N z ) buried layers were synthesized by high fluence (โฅ 1 ร 10 17 ions-cm -2 ) ion implantation of O + and N + sequentially into single crystal silicon at 150 keV to produce silicon-on-insulator (SOI) structures. The structures of the SOI devices were analyzed by FTIR an