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Radiation damage and amorphization of silicon by 2 MeV nitrogen ion implantation

✍ Scribed by J.K.N. Lindner; R. Zuschlag; E.H. te Kaat

Book ID
113282718
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
458 KB
Volume
62
Category
Article
ISSN
0168-583X

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Radiation damage and amorphization of si
Radiation damage and amorphization of silicon by 2 MeV nitrogen ion implantation
✍ J.K.N. Lindner; R. Zuschlag; E.H. te Kaat πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 359 KB

Radiation damage and amorphization of (111) silicon after 2 MeV 14N ion implantation at temperatures from 125 to 450 K is studied in a dose range of 2 x 10 ~3 to 5 x 10 ~7 N cm -2 mainly by optical reflectivity depth profiling. Over a wide range of doses and temperatures, damage can be described by