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Radiation damage and amorphization of silicon by 6 MeV Ni ion implantation

โœ Scribed by J.K.N. Lindner; R. Domres; E.H. Te Kaat

Book ID
113280185
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
432 KB
Volume
39
Category
Article
ISSN
0168-583X

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๐Ÿ“œ SIMILAR VOLUMES

Radiation damage and amorphization of si
Radiation damage and amorphization of silicon by 2 MeV nitrogen ion implantation
โœ J.K.N. Lindner; R. Zuschlag; E.H. te Kaat ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 359 KB

Radiation damage and amorphization of (111) silicon after 2 MeV 14N ion implantation at temperatures from 125 to 450 K is studied in a dose range of 2 x 10 ~3 to 5 x 10 ~7 N cm -2 mainly by optical reflectivity depth profiling. Over a wide range of doses and temperatures, damage can be described by

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โœ J.H. Hamlyn-Harris; D.H. St. John; D.K. Sood ๐Ÿ“‚ Article ๐Ÿ“… 1991 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 889 KB

Room temperature ion implantation of 40 keV phosphorus ions into crystalline (f.c.c.) nickel resulted in the formation of h.c.p, nickel at low doses followed by amorphization, and at high doses the formation of b.c.t. Ni3P. These observations can be understood in terms of a model involving surface s