Radiation damage of UO2 implanted with 100 MeV iodine ions
โ Scribed by Hayashi, Kimio; Kikuchi, Hironobu; Fukuda, Kousaku
- Book ID
- 120336373
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 392 KB
- Volume
- 213-214
- Category
- Article
- ISSN
- 0925-8388
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๐ SIMILAR VOLUMES
Radiation damage and amorphization of (111) silicon after 2 MeV 14N ion implantation at temperatures from 125 to 450 K is studied in a dose range of 2 x 10 ~3 to 5 x 10 ~7 N cm -2 mainly by optical reflectivity depth profiling. Over a wide range of doses and temperatures, damage can be described by
Damage in n-GaAs implanted with 100 MeV 28 Si ions has been investigated using low temperature (T $ 20 K) photoluminescence (PL) measurements on samples irradiated with fluences of 10 16 ions m ร2 , 10 17 ions m ร2 and 10 18 ions m ร2 , respectively and annealed at various temperatures up to 1000 ยฐC