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Quantum mechanical compact modeling of symmetric double-gate MOSFETs using variational approach

โœ Scribed by Vimala, P.; Balamurugan, N. B.


Book ID
121372937
Publisher
IOP Publishing
Year
2012
Tongue
English
Weight
303 KB
Volume
33
Category
Article
ISSN
1674-4926

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โœ Wei Wang; Huaxin Lu; Jooyoung Song; Shih-Hsien Lo; Yuan Taur ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 336 KB

Quantum effects have been incorporated in the analytic potential model for double-gate MOSFETs. From extensive solutions to the coupled Schrodinger and Poisson equations, threshold voltage shift and inversion layer capacitance are extracted as closed form functions of silicon thickness and inversion