Compact modeling of quantum effects in s
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Wei Wang; Huaxin Lu; Jooyoung Song; Shih-Hsien Lo; Yuan Taur
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Article
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2010
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Elsevier Science
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English
โ 336 KB
Quantum effects have been incorporated in the analytic potential model for double-gate MOSFETs. From extensive solutions to the coupled Schrodinger and Poisson equations, threshold voltage shift and inversion layer capacitance are extracted as closed form functions of silicon thickness and inversion