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Compact modeling of quantum effects in symmetric double-gate MOSFETs

✍ Scribed by Wei Wang; Huaxin Lu; Jooyoung Song; Shih-Hsien Lo; Yuan Taur

Book ID
103833736
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
336 KB
Volume
41
Category
Article
ISSN
0026-2692

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✦ Synopsis

Quantum effects have been incorporated in the analytic potential model for double-gate MOSFETs. From extensive solutions to the coupled Schrodinger and Poisson equations, threshold voltage shift and inversion layer capacitance are extracted as closed form functions of silicon thickness and inversion charge density. With these modifications, the compact model is shown to reproduce C-V and I-V curves of double-gate MOSFETs consistent with those obtained from those measured from experimental FinFET hardware.

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## Abstract Recently we developed a model for symmetric double‐gate MOSFETs (SDDGM) that, for the first time, considers the doping concentration in the Si film in the complete range from 1Γ—10^14^ to 3Γ—10^18^ cm^βˆ’3^. The model covers a wide range of technological parameters and includes short channe