A compact model for the I–V characteristics of an undoped double-gate MOSFET
✍ Scribed by Hedley C. Morris; Alfonso Limon
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 586 KB
- Volume
- 79
- Category
- Article
- ISSN
- 0378-4754
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The present paper proposes an analytical model of threshold voltage and current voltage characteristics for short channel fully depleted cylindrical / surrounding gate MOSFET based on the solution of Poisson's equation in cylindrical coordinates. The analysis takes into account the field-dependent m
## Abstract Recently we developed a model for symmetric double‐gate MOSFETs (SDDGM) that, for the first time, considers the doping concentration in the Si film in the complete range from 1×10^14^ to 3×10^18^ cm^−3^. The model covers a wide range of technological parameters and includes short channe