✦ LIBER ✦

Mobility models for the I–V characteristics of buried-channel MOSFETs

✍ Scribed by Ching-Yuan Wu; Kou-Cheng Hsu

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

An accurate mobility model for the I–V c

✍ Ching-Yuan Wu; Yeong-Wen Daih 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 652 KB

Analytical modelling of long-channel MOS

✍ Andrzej Jakubowski; Bogdan Majkusiak; Lidia &Ł;ukasiak 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 267 KB

“Universal” effective mobility of empiri

✍ Hon-Sum Wong 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 1001 KB

A 2D analytic field-dependent-mobility m

✍ Vaneeta Aggarwal; R.S Gupta 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 331 KB

A compact model for the I–V characterist

✍ Hedley C. Morris; Alfonso Limon 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 586 KB

Threshold and subthreshold characteristi

✍ Y. Ōmura; K. Ohwada 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 763 KB