Analytical model for threshold voltage and I–V characteristics of fully depleted short channel cylindrical/surrounding gate MOSFET

✍ Scribed by Abhinav Kranti; S. Haldar; R.S. Gupta

• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 417 KB
• Volume: 56
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(00)00419-6

✦ Synopsis

The present paper proposes an analytical model of threshold voltage and current voltage characteristics for short channel fully depleted cylindrical / surrounding gate MOSFET based on the solution of Poisson's equation in cylindrical coordinates. The analysis takes into account the field-dependent mobility, velocity saturation and the effect of source / drain resistance. Advantages of surrounding / cylindrical structure over the conventional planar structure are investigated in detail. The results so obtained are in good agreement with simulated data available in the literature.