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Analytical modelling for the current–voltage characteristics of undoped or lightly-doped symmetric double-gate MOSFETs

✍ Scribed by A. Tsormpatzoglou; D.H. Tassis; C.A. Dimitriadis; G. Ghibaudo; G. Pananakakis; N. Collaert


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
443 KB
Volume
87
Category
Article
ISSN
0167-9317

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✍ Joaquín Alvarado; Benjamin Iñiguez; Magali Estrada; Denis Flandre; Antonio Cerde 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 374 KB

## Abstract Recently we developed a model for symmetric double‐gate MOSFETs (SDDGM) that, for the first time, considers the doping concentration in the Si film in the complete range from 1×10^14^ to 3×10^18^ cm^−3^. The model covers a wide range of technological parameters and includes short channe