𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Comparison and improvement of two core compact models for double-gate MOSFETs

✍ Scribed by Xingye Zhou; Zhize Zhou; Jian Zhang; Lining Zhang; Chenyue Ma; Jin He; Xing Zhang

Book ID
108271815
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
339 KB
Volume
54
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

On the suitability of DD and HD models f
On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs
✍ Ralf Granzner; V.M Polyakov; F Schwierz; M Kittler; T Doll πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 150 KB

The drain currents of nanometer double-gate MOSFETs with gate lengths in the range from 100 to 5 nm are calculated using a hierarchy of simulation approaches. By comparing Monte Carlo (MC), drift-di usion (DD), and hydrodynamic (HD) simulation results the suitability of the DD and HD models for the