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On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs

✍ Scribed by Ralf Granzner; V.M Polyakov; F Schwierz; M Kittler; T Doll

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
150 KB
Volume
19
Category
Article
ISSN
1386-9477

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✦ Synopsis

The drain currents of nanometer double-gate MOSFETs with gate lengths in the range from 100 to 5 nm are calculated using a hierarchy of simulation approaches. By comparing Monte Carlo (MC), drift-di usion (DD), and hydrodynamic (HD) simulation results the suitability of the DD and HD models for the investigation of the on-and subthreshold currents of nano-scaled MOSFETs is tested. Modiÿcations of the velocity-ÿeld characteristics in the DD simulations are suggested to improve the accuracy of the DD model.

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