𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A simple model of the nanoscale double gate MOSFET based on the flux method

✍ Scribed by H. A. Hamid; B. Iñíguez; D. Jiménez; L. F. Marsal; J. Pallarès


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
169 KB
Volume
2
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Implementation of the symmetric doped do
✍ Joaquín Alvarado; Benjamin Iñiguez; Magali Estrada; Denis Flandre; Antonio Cerde 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 374 KB

## Abstract Recently we developed a model for symmetric double‐gate MOSFETs (SDDGM) that, for the first time, considers the doping concentration in the Si film in the complete range from 1×10^14^ to 3×10^18^ cm^−3^. The model covers a wide range of technological parameters and includes short channe

On the suitability of DD and HD models f
✍ Ralf Granzner; V.M Polyakov; F Schwierz; M Kittler; T Doll 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 150 KB

The drain currents of nanometer double-gate MOSFETs with gate lengths in the range from 100 to 5 nm are calculated using a hierarchy of simulation approaches. By comparing Monte Carlo (MC), drift-di usion (DD), and hydrodynamic (HD) simulation results the suitability of the DD and HD models for the

Accurate prediction of the volume invers
✍ Oana Moldovan; Ferney A. Chaves; David Jiménez; Jean-Pierre Raskin; Benjamin Iñi 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 251 KB

## Abstract This paper demonstrates the capability of our previously published undoped Double‐Gate (DG) MOSFET explicit and analytical compact model to also forecast the effect of the volume inversion (VI) on the intrinsic capacitances. For that purpose, we present simulation results for these capa