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Symmetrical unified compact model of short-channel double-gate MOSFETs

✍ Scribed by K. Papathanasiou; C.G. Theodorou; A. Tsormpatzoglou; D.H. Tassis; C.A. Dimitriadis; M. Bucher; G. Ghibaudo


Book ID
113916081
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
407 KB
Volume
69
Category
Article
ISSN
0038-1101

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Compact modeling of quantum effects in s
✍ Wei Wang; Huaxin Lu; Jooyoung Song; Shih-Hsien Lo; Yuan Taur πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 336 KB

Quantum effects have been incorporated in the analytic potential model for double-gate MOSFETs. From extensive solutions to the coupled Schrodinger and Poisson equations, threshold voltage shift and inversion layer capacitance are extracted as closed form functions of silicon thickness and inversion