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Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET

โœ Scribed by Munteanu, D.; Autran, J. L.; Harrison, S.; Nehari, K.; Tintori, O.; Skotnicki, T.


Book ID
126593385
Publisher
Taylor and Francis Group
Year
2005
Tongue
English
Weight
408 KB
Volume
31
Category
Article
ISSN
0892-7022

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Compact modeling of quantum effects in s
โœ Wei Wang; Huaxin Lu; Jooyoung Song; Shih-Hsien Lo; Yuan Taur ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 336 KB

Quantum effects have been incorporated in the analytic potential model for double-gate MOSFETs. From extensive solutions to the coupled Schrodinger and Poisson equations, threshold voltage shift and inversion layer capacitance are extracted as closed form functions of silicon thickness and inversion