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A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects

✍ Scribed by Baccarani, G.; Reggiani, S.


Book ID
114537815
Publisher
IEEE
Year
1999
Tongue
English
Weight
518 KB
Volume
46
Category
Article
ISSN
0018-9383

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Compact modeling of quantum effects in s
✍ Wei Wang; Huaxin Lu; Jooyoung Song; Shih-Hsien Lo; Yuan Taur πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 336 KB

Quantum effects have been incorporated in the analytic potential model for double-gate MOSFETs. From extensive solutions to the coupled Schrodinger and Poisson equations, threshold voltage shift and inversion layer capacitance are extracted as closed form functions of silicon thickness and inversion