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Modelling the centroid and charge density in double-gate MOSFETs including quantum effects

✍ Scribed by Vimala, P.; Balamurugan, N.B.

Book ID
120793149
Publisher
Taylor and Francis Group
Year
2013
Tongue
English
Weight
750 KB
Volume
100
Category
Article
ISSN
0020-7217

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Quantum effects have been incorporated in the analytic potential model for double-gate MOSFETs. From extensive solutions to the coupled Schrodinger and Poisson equations, threshold voltage shift and inversion layer capacitance are extracted as closed form functions of silicon thickness and inversion