𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Compact modeling of symmetrical double-gate MOSFETs including carrier confinement and short-channel effects

✍ Scribed by Munteanu, D.; Autran, J. L.; Loussier, X.; Harrison, S.; Cerutti, R.


Book ID
126986151
Publisher
Taylor and Francis Group
Year
2007
Tongue
English
Weight
543 KB
Volume
33
Category
Article
ISSN
0892-7022

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Compact modeling of quantum effects in s
✍ Wei Wang; Huaxin Lu; Jooyoung Song; Shih-Hsien Lo; Yuan Taur πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 336 KB

Quantum effects have been incorporated in the analytic potential model for double-gate MOSFETs. From extensive solutions to the coupled Schrodinger and Poisson equations, threshold voltage shift and inversion layer capacitance are extracted as closed form functions of silicon thickness and inversion