Punchthrough path in double gate SOI MOSFETs
β Scribed by Guo fu Niu; Gang Ruan
- Book ID
- 103389293
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 246 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0038-1101
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π SIMILAR VOLUMES
Electron transport in ultrathin double-gate (DG) silicon-on-insulator (SOI) devices is studied as a function of the transverse electric field and the silicon layer thickness, with particular attention to the evaluation of stationary drift velocity and low-field mobility at room temperature. A one-el
Numerical simulation results derived from a SchrΓΆdinger-Poisson tool applied to scaled double-gate (DG) MOSFETs, supplemented by analytical characterizations of the pertinent physics, are presented to give insight concerning the near-ideal features of DG devices and to explain how the low-voltage dr
Quantum effects have been incorporated in the analytic potential model for double-gate MOSFETs. From extensive solutions to the coupled Schrodinger and Poisson equations, threshold voltage shift and inversion layer capacitance are extracted as closed form functions of silicon thickness and inversion