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Electron transport in ultrathin double-gate SOI devices

✍ Scribed by F Gámiz; J.B Roldán; J.A López-Villanueva; F Jiménez-Molinos; J.E Carceller

Book ID: 104305638
Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 137 KB
Volume: 59
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(01)00635-9

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✦ Synopsis

Electron transport in ultrathin double-gate (DG) silicon-on-insulator (SOI) devices is studied as a function of the transverse electric field and the silicon layer thickness, with particular attention to the evaluation of stationary drift velocity and low-field mobility at room temperature. A one-electron Monte Carlo simulator has been used.

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