Electron transport in ultrathin double-g
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F GΓ‘miz; J.B RoldΓ‘n; J.A LΓ³pez-Villanueva; F JimΓ©nez-Molinos; J.E Carceller
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Article
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2001
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Elsevier Science
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English
β 137 KB
Electron transport in ultrathin double-gate (DG) silicon-on-insulator (SOI) devices is studied as a function of the transverse electric field and the silicon layer thickness, with particular attention to the evaluation of stationary drift velocity and low-field mobility at room temperature. A one-el