✦ LIBER ✦

Computer model and charge transport studies in short gate charge-coupled devices

✍ Scribed by M.H. Elsaid; S.G. Chamberlain; L.A.K. Watt

Publisher: Elsevier Science
Year: 1977
Tongue: English
Weight: 870 KB
Volume: 20
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(77)90035-1

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Computer model and charge transport stud

Computer model and charge transport studies in short gate charge-coupled devices : M. H. Elsaid, S. G. Chamberlain and L. A. K. Watt. Solid-St. Electron.20, (1) 61 (1977)

📂 Article 📅 1977 🏛 Elsevier Science 🌐 English ⚖ 249 KB

Dual-gate charge sensing in charge-coupl

Dual-gate charge sensing in charge-coupled devices : G. S. Hobson, R. Longstone and R. C. Tozer. Solid-St. Electron Devices 2, (6) 207 (November 1978)

📂 Article 📅 1979 🏛 Elsevier Science 🌐 English ⚖ 116 KB

ChemInform Abstract: Fundamentals in the

ChemInform Abstract: Fundamentals in the Design of Molecular Electronic Devices: Long-Range Charge Carrier Transport and Electronic Coupling

✍ Marye Anne Fox 📂 Article 📅 2010 🏛 John Wiley and Sons ⚖ 24 KB 👁 2 views

Control of Boron diffusion in polysilico

Control of Boron diffusion in polysilicon for constructing overlapping polysilicon gate charge-coupled devices : A. Srivastava and J. T. Boyd. Microelectron. Reliab.23 (1), 179 (1983)

📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 110 KB

Control of Borron diffusion in polysilic

Control of Borron diffusion in polysilicon for constructing overlapping polysilicon gate charge-coupled devices: A. Srivastava and J.T. Boyd Microelectron. Reliab. 23 (1), 179 (1983)

📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 95 KB

The influence of higher moments is also important for the case of direct implantation of wells for CMOS. Ion equidensity distributions below a window in the mask are shown for boron and arsenic implantation into silicon at energies between 70 ke V and 800 ke V. UV exposure, systems and control TED