Control of Borron diffusion in polysilicon for constructing overlapping polysilicon gate charge-coupled devices: A. Srivastava and J.T. Boyd Microelectron. Reliab. 23 (1), 179 (1983)

• Publisher: Elsevier Science
• Year: 1986
• Tongue: English
• Weight: 95 KB
• Volume: 17
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(86)80122-7

✦ Synopsis

The influence of higher moments is also important for the case of direct implantation of wells for CMOS.

Ion equidensity distributions below a window in the mask are shown for boron and arsenic implantation into silicon at energies between 70 ke V and 800 ke V.

UV exposure, systems and control TED. C. BETTES Semiconductor Int., 83 (April 1982) UV exposure of photoresist is still the most commonly used photolithographic process in microelectronics manufacture and will continue to be for quite some time. UV exposure control is vital for obtaining the reproducible results necessary for the manufacture of today's high density circuits.