Control of Boron diffusion in polysilicon for constructing overlapping polysilicon gate charge-coupled devices : A. Srivastava and J. T. Boyd. Microelectron. Reliab.23 (1), 179 (1983)

Control of Borron diffusion in polysilic

Control of Borron diffusion in polysilicon for constructing overlapping polysilicon gate charge-coupled devices: A. Srivastava and J.T. Boyd Microelectron. Reliab. 23 (1), 179 (1983)

📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 95 KB

The influence of higher moments is also important for the case of direct implantation of wells for CMOS. Ion equidensity distributions below a window in the mask are shown for boron and arsenic implantation into silicon at energies between 70 ke V and 800 ke V. UV exposure, systems and control TED