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Reversed electron-hole pair transport in SOI structure

✍ Scribed by Valentin N. Dobrovolsky; Larisa V. Ishchuk; Georgii K. Ninidze

Book ID
104305659
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
103 KB
Volume
59
Category
Article
ISSN
0167-9317

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✦ Synopsis

Calculation of electron-hole pair drift velocity in silicon is represented. It was shown that the reversed pair drift must take place in n-silicon. The silicon-on-insulator structure was used for the reversed drift observation.

πŸ“œ SIMILAR VOLUMES

Electron transport in ultrathin double-g
Electron transport in ultrathin double-gate SOI devices
✍ F GΓ‘miz; J.B RoldΓ‘n; J.A LΓ³pez-Villanueva; F JimΓ©nez-Molinos; J.E Carceller πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 137 KB

Electron transport in ultrathin double-gate (DG) silicon-on-insulator (SOI) devices is studied as a function of the transverse electric field and the silicon layer thickness, with particular attention to the evaluation of stationary drift velocity and low-field mobility at room temperature. A one-el