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A new approach for numerical simulation of quantum transport in double-gate SOI

✍ Scribed by Tarek M. Abdolkader

Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
359 KB
Volume
20
Category
Article
ISSN
0894-3370

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✦ Synopsis

Abstract

Numerical simulation of nanoscale double‐gate SOI (Silicon‐on‐Insulator) greatly depends on the accurate representation of quantum mechanical effects. These effects include, mainly, the quantum confinement of carriers by gate‐oxides in the direction normal to the interfaces, and the quantum transport of carriers along the channel. In a previous work, the use of transfer matrix method (TMM) was proposed for the simulation of the first effect. In this work, TMM is proposed to be used for the solution of Schrodinger equation with open boundary conditions to simulate the second quantum‐mechanical effect. Transport properties such as transmission probability, carrier concentration, and I–V characteristics resulting from quantum transport simulation using TMM are compared with that using the traditional tight‐binding model (TBM). Comparison showed that, when the same mesh size is used in both methods, TMM gives more accurate results than TBM. Copyright © 2007 John Wiley & Sons, Ltd.

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