✦ LIBER ✦

Extraordinarily high drive currents in asymmetrical double-gate MOSFETs

✍ Scribed by Jerry G. Fossum; Zhibin Ren; Keunwoo Kim; Mark Lundstrom

Book ID: 102620299
Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 271 KB
Volume: 28
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.2000.0957

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✦ Synopsis

Numerical simulation results derived from a Schrödinger-Poisson tool applied to scaled double-gate (DG) MOSFETs, supplemented by analytical characterizations of the pertinent physics, are presented to give insight concerning the near-ideal features of DG devices and to explain how the low-voltage drive current of the asymmetrical DG MOSFET, having only one predominant channel, can be comparable to, and even higher than, that of the symmetrical-gate counterpart designed to have the same off-state current.

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