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Pulsed microwave S-parameters of a silicon germanium heterojunction bipolar transistor

✍ Scribed by Scott A. Wartenberg; Charles R. Westgate

Book ID: 101274312
Publisher: John Wiley and Sons
Year: 1998
Tongue: English
Weight: 224 KB
Volume: 18
Category: Article
ISSN: 0895-2477
DOI: 10.1002/(sici)1098-2760(199807)18:4<258::aid-mop6>3.0.co;2-d

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✦ Synopsis

eigenvalue problem instead of a simple second-order equation with EVP. FEM is basically field oriented, and is particularly adequate for investigating electromagnetic field configurations in intricate geometries. The FEM, however, yields implicitly the propagation constant. On the contrary, the EVP yields a straightforward explicit expression for the circuit parameter of interest. Exact fields can be derived by using the stationarity of the propagation constant to obtain successive improvements of field expressions.

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## Abstract By deriving new __Z__‐parameter equations, accurate extraction is performed to determine all base‐collector model parameters in a SiGe heterojunction bipolar transistor (HBT) equivalent circuit directly from measured __S__ parameters, without any test structure and geometric calculation