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Characterization of silicon–germanium heterojunction bipolar transistors degradation in silicon–germanium BiCMOS technologies

✍ Scribed by Seung-Yun Lee; Chan Woo Park

Book ID
108269527
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
358 KB
Volume
50
Category
Article
ISSN
0038-1101

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Pulsed microwave S-parameters of a silicon germanium heterojunction bipolar transistor
✍ Scott A. Wartenberg; Charles R. Westgate 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 224 KB

eigenvalue problem instead of a simple second-order equation with EVP. FEM is basically field oriented, and is particularly adequate for investigating electromagnetic field configurations in intricate geometries. The FEM, however, yields implicitly the propagation constant. On the contrary, the EVP