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Modeling the temperature-dependent Early voltage of a silicon germanium heterojunction bipolar transistor

โœ Scribed by Wartenberg, S.A.; Westgate, C.R.

Book ID
114537748
Publisher
IEEE
Year
1999
Tongue
English
Weight
136 KB
Volume
46
Category
Article
ISSN
0018-9383

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๐Ÿ“œ SIMILAR VOLUMES

Pulsed microwave S-parameters of a silic
Pulsed microwave S-parameters of a silicon germanium heterojunction bipolar transistor
โœ Scott A. Wartenberg; Charles R. Westgate ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 224 KB

eigenvalue problem instead of a simple second-order equation with EVP. FEM is basically field oriented, and is particularly adequate for investigating electromagnetic field configurations in intricate geometries. The FEM, however, yields implicitly the propagation constant. On the contrary, the EVP