Neutral base recombination and its influence on the temperature dependence of Early voltage and current gain-Early voltage product in UHV/CVD SiGe heterojunction bipolar transistors

✍ Scribed by Joseph, A.J.; Cressler, J.D.; Richey, D.M.; Jaeger, R.C.; Harame, D.L.

• Book ID: 114536698
• Publisher: IEEE
• Year: 1997
• Tongue: English
• Weight: 342 KB
• Volume: 44
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.556150