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The temperature dependent current gain of heterojunction bipolar transistors

✍ Scribed by Bo Willén; Urban Westergren


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
178 KB
Volume
15
Category
Article
ISSN
0167-9317

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High Current Gains Obtained by InGaN/GaN
✍ Makimoto, T. ;Kumakura, K. ;Kobayashi, N. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 85 KB

InGaN/GaN double heterojunction bipolar Npn transistors have been fabricated using p-type InGaN and n-type GaN as base and collector layers, respectively. The structures were grown on SiC substrates by low-pressure metalorganic vapor phase epitaxy. The In mole fraction in the base layer and its thic