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Bias and temperature dependencies of base and collector leakage currents of AlGaAsGaAs heterojunction bipolar transistors

✍ Scribed by J.J Liou; S.H Sheu; C.I Huang; D.C Williamson

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
364 KB
Volume
39
Category
Article
ISSN
0038-1101

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πŸ“œ SIMILAR VOLUMES

Parameter extraction of a base-collector
Parameter extraction of a base-collector equivalent circuit model for SiGe heterojunction bipolar transistors
✍ Seonghearn Lee πŸ“‚ Article πŸ“… 2003 πŸ› John Wiley and Sons 🌐 English βš– 107 KB

## Abstract By deriving new __Z__‐parameter equations, accurate extraction is performed to determine all base‐collector model parameters in a SiGe heterojunction bipolar transistor (HBT) equivalent circuit directly from measured __S__ parameters, without any test structure and geometric calculation