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Parameter extraction of a base-collector equivalent circuit model for SiGe heterojunction bipolar transistors

✍ Scribed by Seonghearn Lee

Publisher: John Wiley and Sons
Year: 2003
Tongue: English
Weight: 107 KB
Volume: 38
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.11067

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✦ Synopsis

Abstract

By deriving new Z‐parameter equations, accurate extraction is performed to determine all base‐collector model parameters in a SiGe heterojunction bipolar transistor (HBT) equivalent circuit directly from measured S parameters, without any test structure and geometric calculation. The calculated power and current gains are in good agreement with the measured gains, thus verifying the accuracy of the extraction. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 38: 384–387, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11067

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