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SiGe-base heterojunction bipolar transistors: An analytical current gain and forward transit time model

✍ Scribed by T.C. Lu; H.P. Chen; J.B. Kuo

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 593 KB
Volume: 36
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(93)90170-u

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