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Cryogenic operation of third-generation, 200-GHz peak-fT, silicon-germanium heterojunction bipolar transistors

✍ Scribed by Banerjee, B.; Venkataraman, S.; Yuan Lu; Qingqing Liang; Chang-Ho Lee; Nuttinck, S.; Dekhyuon Heo; Chen, Y.-J.E.; Cressler, J.D.; Laskar, J.; Freeman, G.; Ahlgren, D.C.


Book ID
114617742
Publisher
IEEE
Year
2005
Tongue
English
Weight
841 KB
Volume
52
Category
Article
ISSN
0018-9383

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