Pulsed microwave characterization of an SiGe heterojunction bipolar transistor
β Scribed by Wartenberg, S.A.; Westgate, C.R.
- Book ID
- 114553409
- Publisher
- IEEE
- Year
- 1999
- Tongue
- English
- Weight
- 90 KB
- Volume
- 47
- Category
- Article
- ISSN
- 0018-9480
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π SIMILAR VOLUMES
A model of heat transfer in a SiGe heterojunction bipolar transistor (HBT) at the macro scale is established, that leads to an analytical solution. Modelling is based on the use of integral transforms as the Fourier and Laplace ones. The heat source is assumed as a heat flux applied at the base-coll
eigenvalue problem instead of a simple second-order equation with EVP. FEM is basically field oriented, and is particularly adequate for investigating electromagnetic field configurations in intricate geometries. The FEM, however, yields implicitly the propagation constant. On the contrary, the EVP