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Early effect of SiGe heterojunction bipolar transistors

✍ Scribed by Xiao-Bo Xu; He-Ming Zhang; Hui-Yong Hu; Jiang-Tao Qu


Book ID
113916084
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
249 KB
Volume
72
Category
Article
ISSN
0038-1101

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Self heating modeling of SiGe heterojunc
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A model of heat transfer in a SiGe heterojunction bipolar transistor (HBT) at the macro scale is established, that leads to an analytical solution. Modelling is based on the use of integral transforms as the Fourier and Laplace ones. The heat source is assumed as a heat flux applied at the base-coll