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Recent advances with SiGe heterojunction bipolar transistors

✍ Scribed by Andreas Gruhle; Andreas Schüppen


Book ID
108388988
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
566 KB
Volume
294
Category
Article
ISSN
0040-6090

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A model of heat transfer in a SiGe heterojunction bipolar transistor (HBT) at the macro scale is established, that leads to an analytical solution. Modelling is based on the use of integral transforms as the Fourier and Laplace ones. The heat source is assumed as a heat flux applied at the base-coll