✦ LIBER ✦

Materials and technology issues for SiGe heterojunction bipolar transistors

✍ Scribed by Peter Ashburn

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Empirical global modelling of Si/SiGe he

✍ Taher, H. 📂 Article 📅 2008 🏛 The Institution of Engineering and Technology 🌐 English ⚖ 591 KB

Design considerations for a-Si:H/SiGe/Si

✍ Della Corte, F.G.; Pezzimenti, F. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 296 KB

Lateral SiGe heterojunction bipolar tran

✍ P. Pengpad; K. Osman; N.S. Lloyd; J.M. Bonar; P. Ashburn; H.A. Kemhadjian; J.S. 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 539 KB

Material-based comparison for power hete

✍ Gao, G.-b.; Morkoc, H. 📂 Article 📅 1991 🏛 IEEE 🌐 English ⚖ 719 KB

Optimized frequency characteristics of S

✍ M. Karlsteen; M. Willander 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 515 KB

Electrical characterisation of SiGe hete

✍ O. De Barros; B. Le Tron; R.C. Woods; G. Giroult-Matlakowski; G. Vincent; G. Bré 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 364 KB