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Empirical global modelling of Si/SiGe heterojunction bipolar transistors

✍ Scribed by Taher, H.

Book ID: 117812393
Publisher: The Institution of Engineering and Technology
Year: 2008
Tongue: English
Weight: 591 KB
Volume: 2
Category: Article
ISSN: 1751-8725
DOI: 10.1049/iet-map:20070171

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